Determination of stoichiometry deviation in wide-band II-VI semiconductors on the basis of equilibrium vapor phase composition

A method of determining stoichiometry deviation in cadmium and zinc chalcogenides that is based on the temperature dependence ratio components partial pressures during evaporation solid compounds a limited volume has been suggested. The new differs from methods implying collection excessive component large volumes. includes measuring vapor phase material heating to above 800 K, solving set balance equations electric neutrality equation, calculating initial compound at room temperature. Intrinsic point defect concentrations are calculated using quasichemical reactions. independent variables sought deviation, pressure metal concentration free electrons. We show parameter equation which determines method’s sensitivity i.e., phases, can be considered constant unless this exceeds 50. If measured optical density vapors, then increased not worse than 10 -6 at.%.